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31.
In this paper, we consider a class of split mixed vector quasivariational inequality problems in real Hilbert spaces and establish new gap functions by using the method of the nonlinear scalarization function. Further, we obtain some error bounds for the underlying split mixed vector quasivariational inequality problems in terms of regularized gap functions. Finally, we give some examples to illustrate our results. The results obtained in this paper are new.  相似文献   
32.
One of the most important multipartite entangled states, Greenberger–Horne–Zeilinger state (GHZ), serves as a fundamental resource for quantum foundation test, quantum communication and quantum computation. To increase the number of entangled particles, significant experimental efforts should been invested due to the complexity of optical setup and the difficulty in maintaining the coherence condition for high-fidelity GHZ state. Here, we propose an ultra-integrated scalable on-chip GHZ state generation scheme based on frequency combs. By designing several microrings pumped by different lasers, multiple partially overlapped quantum frequency combs are generated to supply as the basis for on-chip polarization-encoded GHZ state with each qubit occupying a certain spectral mode. Both even and odd numbers of GHZ states can be engineered with constant small number of integrated components and easily scaled up on the same chip by only adjusting one of the pump wavelengths. In addition, we give the on-chip design of projection measurement for characterizing GHZ states and show the reconfigurability of the state. Our proposal is rather simple and feasible within the existing fabrication technologies and we believe it will boost the development of multiphoton technologies.  相似文献   
33.
 固体氧化物燃料电池的翘曲会影响电极-盖板界面的接触情况,从而影响电化学性能,对相关制造工艺提出了很大的挑战.为了分析燃料电池平面度对放电过程的影响,揭示其潜在的风险,我们建立了两个基于有限元法的仿真模型,对考虑平面度缺陷的燃料电池封装和放电进行分析.在对固体氧化物燃料电池进行平面度测量的基础上,首先建立了具有真实燃料电池翘曲特性的几何模型,分析封装过程中接触压力的分布情况.然后将接触电阻的仿真结果导入到三维多物理场耦合模型中,模拟具有平面度缺陷的燃料电池电化学性能.计算结果展示了燃料电池两侧封装过程中接触压力的分布情况.通过对比有接触电阻和无接触电阻的燃料电池电流密度,分析了电池与盖板的接触对放电过程的影响.结果表明,燃料电池的凹陷面较难达到满意的接触状态,需要比凸起面更大的封装压力.燃料电池表面接触电阻的变化将引起电流传导路径的变化,产生局部高电流或低电流.这项工作强调了在燃料电池中保持均匀分布的接触电阻的重要性,为今后的优化工作奠定了基础.  相似文献   
34.
王铮  刘骁 《应用声学》2020,39(6):868-875
采用超声水浸聚焦斜入射方式进行小棒材表面、近表缺陷检测时,声波在水/棒和棒/缺陷界面会发生反射、折射、散射、衍射及波形转换等一系列物理变换。此时缺陷可检性对声波入射条件十分敏感,常出现由于检测条件设置不当而导致缺陷漏检、误检的情况。为解决这一问题,本文针对小棒材超声斜入射检测中的主要参数——入射角和水距,开展声场及缺陷声响应仿真,研究检测参数对不同部位缺陷检测能力的影响,并对仿真结果进行试验验证。通过研究得到了检测水距、入射角度对缺陷检测能力的影响,并得到最优检测条件。试验验证结果表明研究制定的检测方案可有效检测出表面、近表面裂纹缺陷。  相似文献   
35.
In this study lanthanum trilactate was prepared by neutralization reaction of lactic acid and lanthanum oxide, purified and identified by X-ray powder diffraction. Infrared spectra (Mid-IR region 4000–650 cm−1) and Raman spectra (Stokes region 4000–100 cm−1) of the high quality crystalline samples have been recorded and presented for the first time. For comparison DFT calculations were performed using Gaussian 09 D.01 and agreement between predicted and measured spectral data has been achieved. Acquired information can be utilized for substance identification for example in various industrial applications or in biological systems.  相似文献   
36.
价廉易得的L-亮氨酸先以苄基同时保护氨基及羧基得(S)-2-(二苄胺基)-4-甲基戊酸苄酯,进而在碱性条件下与乙腈发生亲核取代反应得(S)-4-(二苄胺基)-6-甲基-3-氧代庚腈,再经硼氢化钠选择性还原羰基得(3S,4S)-4-(二苄胺基)-3-羟基-6-甲基庚腈,用双氧水氧化得(3S,4S)-4-(二苄胺基)-3-羟基-6-甲基庚酸,最后在Pd(OH)2/C-H2作用下脱掉苄基得到(3S,4S)-4-氨基-3-羟基-6-甲基庚酸,即(3S,4S)-statine。整个合成路线总产率为33.6%。  相似文献   
37.
Intermolecular Stetter reaction of aromatic aldehydes with (E)-(2-nitrovinyl)cyclohexane catalyzed by thiazolium A has been developed. The reaction rate and efficiency are profoundly impacted by the presence of thiourea B. The reaction affords moderate to good yields of the Stetter product. Some factors influencing yield were discussed.  相似文献   
38.
In previous work we observed two simultaneous transitions in high molecular weight (MW) free‐standing polystyrene films that were interpreted as two thickness‐dependent reduced glass transition temperatures (Tgs). The weaker lower transition agreed well with the MW‐dependent Tg(h) previously reported, while the much stronger upper transition matched the MW‐independent Tg(h) previously observed in low‐MW free‐standing films. Here, we investigate the nature of these two transitions by inspecting the temperature dependence of the films' thermal coefficient of expansion (TCE) and present physical aging measurements using ellipsometry both below and in‐between the two transitions. TCE values indicate approximately 80 to 90% of the film solidifies at the upper transition, while only 10 to 20% remains mobile to lower temperatures, freezing out at the lower transition. Physical aging is observed at a temperature below the upper transition, but above the lower transition, indicative of the upper transition being an actual glass transition associated with the α‐relaxation. © 2014 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2015 , 53, 64–75  相似文献   
39.
Theoretical investigations on the insertion reaction mechanisms of three- membered-ring silylenoid H2 Si Li F with GeH 3R(R = F, OH, NH2) have been systematically carried out by combined density functional theory(DFT) and ab initio quantum chemical calculations. The geometries of all stationary points for these reactions were optimized using the B3 LYP method and then the QCISD method was used to calculate the single-point energies. The calculated results indicate that, there are one precursor complex(Q), one transition state(TS), and one intermediate(IM) which connect the reactants and the products along the potential energy surface. The insertion reactions of three-membered-ring silylenoid with Ge H3 R proceed in a concerted manner, forming H2RSi-Ge H3 and Li F. The calculated potential energy barriers of the three reactions are 29.17, 30.90, and 54.07 k J/mol, and the reaction energies for the three reactions are –127.05, –116.91, and –103.31 k J/mol, respectively. The insertion reactions in solvents are similar to those in vacuum. Under the same situation, the insertion reactions should occur easily in the following order: GeH 3-F GeH 3-OH GeH 3-NH2. The elucidations of the mechanism of these insertion reactions provided a new mode of silicon-germanium bond formation.  相似文献   
40.
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